Low Temperature Magnetotransport in 2D GaN Quantum Wells
نویسندگان
چکیده
Hall mobility of the two dimensional electron gas in GaN quantum wells are calculated in the temperature range 1K-14K incorporating deformation potential acoustic, piezoelectric, background and remote ionized impurity scatterings. The Boltzmann transport equation is solved by a numerical iterative technique using Fermi-Dirac statistics. The variations of longitudinal magnetoresistivity with magnetic field and temperature agree with the available experimental results at temperature T=1.38 K. The Hall mobility is found to decrease sharply at low magnetic fields and the variation becomes less sensitive to higher field values. Hall mobility at such low temperatures has agreed with the results obtained by other researcher.
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